| PART |
Description |
Maker |
| GA100NA60U |
600V UltraFast 10-30 kHz Single IGBT in a SOT-227 package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| UFB120FA40 |
Insulated Ultrafast Rectifier Module 绝缘超快整流模块
400V 120A Ultrafast Doubler Diode in a SOT-227 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FB180SA10 |
100V Single N-Channel HEXFET Power MOSFET in a SOT-227 (Iso) package
|
International Rectifier
|
| FA38SA50LC |
500V Single N-Channel HEXFET Power MOSFET in a SOT-227 (Iso) package
|
IRF[International Rectifier]
|
| FA57SA50LC FA57SA50LCPBF |
57 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
500V Single N-Channel HEXFET Power MOSFET in a SOT-227 (Iso) package
|
International Rectifier
|
| GB70NA60UF13 |
High Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A
|
Vishay Siliconix
|
| HFA120EA60 HFA120FA60 |
600V 60A HEXFRED Discrete Diode in a SOT-227 package
HEXFREDTM Ultrafast, Soft Recovery Diode
|
IRF[International Rectifier]
|
| XC4028XLA-9BG352C XC4013XLA-9BG256C XC4020XLA-9BG2 |
FPGA, 1024 CLBS, 18000 GATES, 227 MHz, PBGA352
FPGA, 576 CLBS, 10000 GATES, 227 MHz, PBGA256
FPGA, 784 CLBS, 13000 GATES, 227 MHz, PBGA256
FPGA, 4096 CLBS, 75000 GATES, 250 MHz, PBGA432
|
XILINX INC
|
| NTF3055L175 NTF3055L175T1G NTF3055L175T1 NTF3055L1 |
Power MOSFET 2 Amps, 60 Volts, Logic Level N Channel SOT-223
Power MOSFET 2.0 A, 60 V, Logic Level N-Channel SOT-223(2A,60V逻辑电平,N通道，SOT-223封装的功率MOSFET)
|
ONSEMI[ON Semiconductor]
|
| QM75E3Y-H QM75E2Y-H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MIC918 MIC918BC5 MIC918BM5 |
51MHz Low-Power SOT-23-5/SC-70 Op Amp 51MHz低功耗运算放大器SOT-23-5/SC-70
51MHz Low-Power SOT-23-5/SC-70 Op Amp OP-AMP, 5000 uV OFFSET-MAX, 45 MHz BAND WIDTH, PDSO5
|
Micrel Semiconductor, Inc.
Micrel Semiconductor,Inc.
|
